PHOTOLUMINESCENCE STUDY OF INTERFACE BETWEEN GAAS EPITAXIAL LAYER AND ITS SUBSTRATE

被引：18

作者：

NAKASHIMA, H

HIRAO, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1970年 / 9卷 / 12期

关键词：

D O I：

10.1143/JJAP.9.1495

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1495 / +

页数：1

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