IMPURITY TRANSFER IN GAAS VAPOR GROWTH AND CARRIER-CONCENTRATION PROFILES OF GROWN FILMS

被引：23

作者：

HASEGAWA, F

SAITO, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1968年 / 7卷 / 11期

关键词：

D O I：

10.1143/JJAP.7.1342

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1342 / &

共 12 条

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[9] CARRIER-CONCENTRATION PROFILES OF N-TYPE SN AND TE DOPED EPITAXIAL GAAS FILMS [J].

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