EXTREMELY LOW THRESHOLD (ALGA) AS MODIFIED MULTIQUANTUM WELL HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：251

作者：

TSANG, WT

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 10期

关键词：

D O I：

10.1063/1.92583

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：786 / 788

页数：3

共 16 条

[1]

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DAPKUS, PD ;

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VOJAK, BA ;

HOLONYAK, N .

APPLIED PHYSICS LETTERS, 1981, 38 (02) :63-65

[4]

DINGLE R, 1976, Patent No. 3982207

[5]

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[6] QUANTUM-WELL HETEROSTRUCTURE LASERS [J].

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KOLBAS, RM ;

DUPUIS, RD ;

DAPKUS, PD .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :170-186

[7] AL-GA DISORDER IN ALXGA1-XAS ALLOYS GROWN BY MOLECULAR-BEAM EPITAXY [J].

MILLER, RC ;

TSANG, WT .

APPLIED PHYSICS LETTERS, 1981, 39 (04) :334-335

[8]

MILLER RC, 1981, PHYS REV B, V24, pR30

[9]

Petroff P. M., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P457

[10] HOW MUCH AL IN ALGAAS-GAAS LASER [J].

RODE, DL .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) :3887-3891

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