ABRUPT TRANSITIONS IN COMPOSITION AND DOPING PROFILE IN GAAS-GA1-XALXAS HETEROSTRUCTURES BY ATMOSPHERIC-PRESSURE MOVPE

被引：6

作者：

MALUENDA, J

FRIJLINK, PM

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 02期

关键词：

D O I：

10.1116/1.582552

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：334 / 337

页数：4

共 7 条

[1] ELECTRON-MOBILITY IN SINGLE AND MULTIPLE PERIOD MODULATION-DOPED (AL,GA)AS/GAAS HETEROSTRUCTURES [J].

DRUMMOND, TJ ;

KOPP, W ;

KEEVER, M ;

MORKOC, H ;

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1023-1028

[2] MOVPE GROWTH OF GA1-XALXAS-GAAS QUANTUM WELL HETEROSTRUCTURES [J].

FRIJLINK, PM ;

MALUENDA, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (09) :L574-L576

[3] ALLOY CLUSTERING IN ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES [J].

HOLONYAK, N ;

LAIDIG, WD ;

VOJAK, BA ;

HESS, K ;

COLEMAN, JJ ;

DAPKUS, PD ;

BARDEEN, J .

PHYSICAL REVIEW LETTERS, 1980, 45 (21) :1703-1706

[4] MODULATION DOPED GAAS-GA1-XALXAS HETEROSTRUCTURES GROWN BY ATMOSPHERIC-PRESSURE MOVPE [J].

MALUENDA, J ;

FRIJLINK, PM .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (03) :L127-L129

[5] AL-GA DISORDER IN ALXGA1-XAS ALLOYS GROWN BY MOLECULAR-BEAM EPITAXY [J].

MILLER, RC ;

TSANG, WT .

APPLIED PHYSICS LETTERS, 1981, 39 (04) :334-335

[6] MOBILITY ENHANCEMENT IN INVERTED ALXGA1-XAS/GAAS MODULATION DOPED STRUCTURES AND ITS DEPENDENCE ON DONOR-ELECTRON SEPARATION [J].

MORKOC, H ;

DRUMMOND, TJ ;

THORNE, RE ;

KOPP, W .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (12) :L913-L916

[7] HIGH-ENERGY (VISIBLE-RED) STIMULATED-EMISSION IN GAAS [J].

VOJAK, BA ;

LAIDIG, WD ;

HOLONYAK, N ;

CAMRAS, MD ;

COLEMAN, JJ ;

DAPKUS, PD .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :621-626

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