MOBILITY ENHANCEMENT IN INVERTED ALXGA1-XAS/GAAS MODULATION DOPED STRUCTURES AND ITS DEPENDENCE ON DONOR-ELECTRON SEPARATION

被引：27

作者：

MORKOC, H ^{[1
]}

DRUMMOND, TJ ^{[1
]}

THORNE, RE ^{[1
]}

KOPP, W ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 12期

关键词：

D O I：

10.1143/JJAP.20.L913

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L913 / L916

页数：4

共 14 条

[1] ELECTRONIC-PROPERTIES OF A SEMICONDUCTOR SUPER-LATTICE .1. SELF-CONSISTENT CALCULATION OF SUBBAND STRUCTURE AND OPTICAL-SPECTRA
ANDO, T
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[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1979, 47 (05) : 1518 - 1527
[2] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES
DINGLE, R
STORMER, HL
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667
[3] EXPERIMENTAL AND THEORETICAL ELECTRON-MOBILITY OF MODULATION DOPED ALXGA1-XAS-GAAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
DRUMMOND, TJ
MORKOC, H
HESS, K
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) : 5231 - 5234
[4] DEPENDENCE OF ELECTRON-MOBILITY ON SPATIAL SEPARATION OF ELECTRONS AND DONORS IN ALXGA1-XAS-GAAS HETEROSTRUCTURES
DRUMMOND, TJ
MORKOC, H
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) : 1380 - 1386
[5] DRUMMOND TJ, J APPL PHYS
[6] DRUMMOND TJ, J CRYS GROWTH
[7] IMPURITY AND PHONON-SCATTERING IN LAYERED STRUCTURES
HESS, K
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (07) : 484 - 486
[8] ROOM-TEMPERATURE MOBILITY OF TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED GAAS-N-ALGAAS HETEROJUNCTION STRUCTURES
HIYAMIZU, S
NANBU, K
MIMURA, T
FUJII, T
HASHIMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) : L378 - L380
[9] KEEVER M, J APPL PHYS
[10] GROWTH-CONDITIONS TO ACHIEVE MOBILITY ENHANCEMENT IN ALXGA1-XAS-GAAS HETEROJUNCTIONS BY MBE
MORKOC, H
WITKOWSKI, LC
DRUMMOND, TJ
STANCHAK, CM
CHO, AY
STREETMAN, BG
[J]. ELECTRONICS LETTERS, 1980, 16 (19) : 753 - 754

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