MODULATION DOPED GAAS-GA1-XALXAS HETEROSTRUCTURES GROWN BY ATMOSPHERIC-PRESSURE MOVPE

[1] SINGLE-INTERFACE ENHANCED MOBILITY STRUCTURES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. ELECTRONICS LETTERS, 1981, 17 (17) : 606 - 608

[2] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667

[3] ELECTRON-MOBILITY IN SINGLE AND MULTIPLE PERIOD MODULATION-DOPED (AL,GA)AS/GAAS HETEROSTRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1023 - 1028

[4] MOVPE GROWTH OF GA1-XALXAS-GAAS QUANTUM WELL HETEROSTRUCTURES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (09): : L574 - L576

[5] HIGH MOBILITY ELECTRONS IN SELECTIVELY DOPED GAAS-N-ALGAAS HETEROSTRUCTURES GROWN BY MBE AND THEIR APPLICATION TO HIGH-SPEED DEVICES [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 455 - 463

[6] LOW-NOISE NORMALLY ON AND NORMALLY OFF TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 530 - 532

[7] HIGH ELECTRON-MOBILITY TRANSISTOR LOGIC [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (08) : L598 - L600

[8] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : L225 - L227

[9] MOBILITY ENHANCEMENT IN INVERTED ALXGA1-XAS/GAAS MODULATION DOPED STRUCTURES AND ITS DEPENDENCE ON DONOR-ELECTRON SEPARATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (12) : L913 - L916

[10] STORMER HL, 1981, APPL PHYS LETT, V39, P912, DOI 10.1063/1.92604

[1] SINGLE-INTERFACE ENHANCED MOBILITY STRUCTURES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. ELECTRONICS LETTERS, 1981, 17 (17) : 606 - 608

[2] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667

[3] ELECTRON-MOBILITY IN SINGLE AND MULTIPLE PERIOD MODULATION-DOPED (AL,GA)AS/GAAS HETEROSTRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1023 - 1028

[4] MOVPE GROWTH OF GA1-XALXAS-GAAS QUANTUM WELL HETEROSTRUCTURES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (09): : L574 - L576

[5] HIGH MOBILITY ELECTRONS IN SELECTIVELY DOPED GAAS-N-ALGAAS HETEROSTRUCTURES GROWN BY MBE AND THEIR APPLICATION TO HIGH-SPEED DEVICES [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 455 - 463

[6] LOW-NOISE NORMALLY ON AND NORMALLY OFF TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 530 - 532

[7] HIGH ELECTRON-MOBILITY TRANSISTOR LOGIC [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (08) : L598 - L600

[8] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : L225 - L227

[9] MOBILITY ENHANCEMENT IN INVERTED ALXGA1-XAS/GAAS MODULATION DOPED STRUCTURES AND ITS DEPENDENCE ON DONOR-ELECTRON SEPARATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (12) : L913 - L916

[10] STORMER HL, 1981, APPL PHYS LETT, V39, P912, DOI 10.1063/1.92604