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LOW-NOISE NORMALLY ON AND NORMALLY OFF TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTORS
被引:20
作者
:
LAVIRON, M
论文数:
0
引用数:
0
h-index:
0
LAVIRON, M
DELAGEBEAUDEUF, D
论文数:
0
引用数:
0
h-index:
0
DELAGEBEAUDEUF, D
DELESCLUSE, P
论文数:
0
引用数:
0
h-index:
0
DELESCLUSE, P
ETIENNE, P
论文数:
0
引用数:
0
h-index:
0
ETIENNE, P
CHAPLART, J
论文数:
0
引用数:
0
h-index:
0
CHAPLART, J
LINH, NT
论文数:
0
引用数:
0
h-index:
0
LINH, NT
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1982年
/ 40卷
/ 06期
关键词
:
D O I
:
10.1063/1.93131
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:530 / 532
页数:3
相关论文
共 13 条
[1]
CHARGE CONTROL OF THE HETEROJUNCTION TWO-DIMENSIONAL ELECTRON-GAS FOR MESFET APPLICATION
DELAGEBEAUDEUF, D
论文数:
0
引用数:
0
h-index:
0
DELAGEBEAUDEUF, D
LINH, NT
论文数:
0
引用数:
0
h-index:
0
LINH, NT
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1981,
28
(07)
: 790
-
795
[2]
TWO-DIMENSIONAL ELECTRON-GAS MESFET STRUCTURE
DELAGEBEAUDEUF, D
论文数:
0
引用数:
0
h-index:
0
DELAGEBEAUDEUF, D
DELESCLUSE, P
论文数:
0
引用数:
0
h-index:
0
DELESCLUSE, P
ETIENNE, P
论文数:
0
引用数:
0
h-index:
0
ETIENNE, P
LAVIRON, M
论文数:
0
引用数:
0
h-index:
0
LAVIRON, M
CHAPLART, J
论文数:
0
引用数:
0
h-index:
0
CHAPLART, J
LINH, NT
论文数:
0
引用数:
0
h-index:
0
LINH, NT
[J].
ELECTRONICS LETTERS,
1980,
16
(17)
: 667
-
668
[3]
DELAGEBEAUDEUF D, UNPUB IEEE T ELECTRO
[4]
TRANSPORT-PROPERTIES IN GAAS-ALXGA1-XAS HETEROSTRUCTURES AND MESFET APPLICATION
DELESCLUSE, P
论文数:
0
引用数:
0
h-index:
0
DELESCLUSE, P
LAVIRON, M
论文数:
0
引用数:
0
h-index:
0
LAVIRON, M
CHAPLART, J
论文数:
0
引用数:
0
h-index:
0
CHAPLART, J
DELAGEBEAUDEUF, D
论文数:
0
引用数:
0
h-index:
0
DELAGEBEAUDEUF, D
LINH, NT
论文数:
0
引用数:
0
h-index:
0
LINH, NT
[J].
ELECTRONICS LETTERS,
1981,
17
(10)
: 342
-
344
[5]
ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES
DINGLE, R
论文数:
0
引用数:
0
h-index:
0
DINGLE, R
STORMER, HL
论文数:
0
引用数:
0
h-index:
0
STORMER, HL
GOSSARD, AC
论文数:
0
引用数:
0
h-index:
0
GOSSARD, AC
WIEGMANN, W
论文数:
0
引用数:
0
h-index:
0
WIEGMANN, W
[J].
APPLIED PHYSICS LETTERS,
1978,
33
(07)
: 665
-
667
[6]
3 PERIOD (A1, GA) AS-GAAS HETEROSTRUCTURES WITH EXTREMELY HIGH MOBILITIES
DRUMMOND, TJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
DRUMMOND, TJ
KOPP, W
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
KOPP, W
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
MORKOC, H
[J].
ELECTRONICS LETTERS,
1981,
17
(13)
: 442
-
444
[7]
HIYAMIZU S, 1981, JPN J APPL PHYS, V20, pL445
[8]
LOW-NOISE TWO-DIMENSIONAL ELECTRON-GAS FET
LAVIRON, M
论文数:
0
引用数:
0
h-index:
0
LAVIRON, M
DELAGEBEAUDEUF, D
论文数:
0
引用数:
0
h-index:
0
DELAGEBEAUDEUF, D
DELESCLUSE, P
论文数:
0
引用数:
0
h-index:
0
DELESCLUSE, P
CHAPLART, J
论文数:
0
引用数:
0
h-index:
0
CHAPLART, J
LINH, NT
论文数:
0
引用数:
0
h-index:
0
LINH, NT
[J].
ELECTRONICS LETTERS,
1981,
17
(15)
: 536
-
537
[9]
ENHANCEMENT-MODE HIGH ELECTRON-MOBILITY TRANSISTORS FOR LOGIC APPLICATIONS
MIMURA, T
论文数:
0
引用数:
0
h-index:
0
MIMURA, T
HIYAMIZU, S
论文数:
0
引用数:
0
h-index:
0
HIYAMIZU, S
JOSHIN, K
论文数:
0
引用数:
0
h-index:
0
JOSHIN, K
HIKOSAKA, K
论文数:
0
引用数:
0
h-index:
0
HIKOSAKA, K
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1981,
20
(05)
: L317
-
L319
[10]
A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS
MIMURA, T
论文数:
0
引用数:
0
h-index:
0
MIMURA, T
HIYAMIZU, S
论文数:
0
引用数:
0
h-index:
0
HIYAMIZU, S
FUJII, T
论文数:
0
引用数:
0
h-index:
0
FUJII, T
NANBU, K
论文数:
0
引用数:
0
h-index:
0
NANBU, K
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(05)
: L225
-
L227
←
1
2
→
共 13 条
[1]
CHARGE CONTROL OF THE HETEROJUNCTION TWO-DIMENSIONAL ELECTRON-GAS FOR MESFET APPLICATION
DELAGEBEAUDEUF, D
论文数:
0
引用数:
0
h-index:
0
DELAGEBEAUDEUF, D
LINH, NT
论文数:
0
引用数:
0
h-index:
0
LINH, NT
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1981,
28
(07)
: 790
-
795
[2]
TWO-DIMENSIONAL ELECTRON-GAS MESFET STRUCTURE
DELAGEBEAUDEUF, D
论文数:
0
引用数:
0
h-index:
0
DELAGEBEAUDEUF, D
DELESCLUSE, P
论文数:
0
引用数:
0
h-index:
0
DELESCLUSE, P
ETIENNE, P
论文数:
0
引用数:
0
h-index:
0
ETIENNE, P
LAVIRON, M
论文数:
0
引用数:
0
h-index:
0
LAVIRON, M
CHAPLART, J
论文数:
0
引用数:
0
h-index:
0
CHAPLART, J
LINH, NT
论文数:
0
引用数:
0
h-index:
0
LINH, NT
[J].
ELECTRONICS LETTERS,
1980,
16
(17)
: 667
-
668
[3]
DELAGEBEAUDEUF D, UNPUB IEEE T ELECTRO
[4]
TRANSPORT-PROPERTIES IN GAAS-ALXGA1-XAS HETEROSTRUCTURES AND MESFET APPLICATION
DELESCLUSE, P
论文数:
0
引用数:
0
h-index:
0
DELESCLUSE, P
LAVIRON, M
论文数:
0
引用数:
0
h-index:
0
LAVIRON, M
CHAPLART, J
论文数:
0
引用数:
0
h-index:
0
CHAPLART, J
DELAGEBEAUDEUF, D
论文数:
0
引用数:
0
h-index:
0
DELAGEBEAUDEUF, D
LINH, NT
论文数:
0
引用数:
0
h-index:
0
LINH, NT
[J].
ELECTRONICS LETTERS,
1981,
17
(10)
: 342
-
344
[5]
ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES
DINGLE, R
论文数:
0
引用数:
0
h-index:
0
DINGLE, R
STORMER, HL
论文数:
0
引用数:
0
h-index:
0
STORMER, HL
GOSSARD, AC
论文数:
0
引用数:
0
h-index:
0
GOSSARD, AC
WIEGMANN, W
论文数:
0
引用数:
0
h-index:
0
WIEGMANN, W
[J].
APPLIED PHYSICS LETTERS,
1978,
33
(07)
: 665
-
667
[6]
3 PERIOD (A1, GA) AS-GAAS HETEROSTRUCTURES WITH EXTREMELY HIGH MOBILITIES
DRUMMOND, TJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
DRUMMOND, TJ
KOPP, W
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
KOPP, W
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
MORKOC, H
[J].
ELECTRONICS LETTERS,
1981,
17
(13)
: 442
-
444
[7]
HIYAMIZU S, 1981, JPN J APPL PHYS, V20, pL445
[8]
LOW-NOISE TWO-DIMENSIONAL ELECTRON-GAS FET
LAVIRON, M
论文数:
0
引用数:
0
h-index:
0
LAVIRON, M
DELAGEBEAUDEUF, D
论文数:
0
引用数:
0
h-index:
0
DELAGEBEAUDEUF, D
DELESCLUSE, P
论文数:
0
引用数:
0
h-index:
0
DELESCLUSE, P
CHAPLART, J
论文数:
0
引用数:
0
h-index:
0
CHAPLART, J
LINH, NT
论文数:
0
引用数:
0
h-index:
0
LINH, NT
[J].
ELECTRONICS LETTERS,
1981,
17
(15)
: 536
-
537
[9]
ENHANCEMENT-MODE HIGH ELECTRON-MOBILITY TRANSISTORS FOR LOGIC APPLICATIONS
MIMURA, T
论文数:
0
引用数:
0
h-index:
0
MIMURA, T
HIYAMIZU, S
论文数:
0
引用数:
0
h-index:
0
HIYAMIZU, S
JOSHIN, K
论文数:
0
引用数:
0
h-index:
0
JOSHIN, K
HIKOSAKA, K
论文数:
0
引用数:
0
h-index:
0
HIKOSAKA, K
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1981,
20
(05)
: L317
-
L319
[10]
A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS
MIMURA, T
论文数:
0
引用数:
0
h-index:
0
MIMURA, T
HIYAMIZU, S
论文数:
0
引用数:
0
h-index:
0
HIYAMIZU, S
FUJII, T
论文数:
0
引用数:
0
h-index:
0
FUJII, T
NANBU, K
论文数:
0
引用数:
0
h-index:
0
NANBU, K
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(05)
: L225
-
L227
←
1
2
→