ENHANCEMENT-MODE HIGH ELECTRON-MOBILITY TRANSISTORS FOR LOGIC APPLICATIONS

被引：59

作者：

MIMURA, T

HIYAMIZU, S

JOSHIN, K

HIKOSAKA, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 05期

关键词：

D O I：

10.1143/JJAP.20.L317

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：L317 / L319

页数：3

相关论文

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[2] HIGH-ELECTRON MOBILITY TRANSISTORS WITH SELECTIVELY DOPED GAAS-N-ALGAAS HETEROJUNCTIONS
MIMURA, T
HIYAMIZU, S
HASHIMOTO, H
FUKUTA, M
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) : 2197 - 2197
[3] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS
MIMURA, T
HIYAMIZU, S
FUJII, T
NANBU, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : L225 - L227
[4] MIMURA T, 1981, JPN J APPL PHYS S, V20, P364