3 PERIOD (A1, GA) AS-GAAS HETEROSTRUCTURES WITH EXTREMELY HIGH MOBILITIES

被引：16

作者：

DRUMMOND, TJ ^{[1
]}

KOPP, W ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

ELECTRONICS LETTERS | 1981年 / 17卷 / 13期

关键词：

D O I：

10.1049/el:19810310

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：442 / 444

页数：3

相关论文

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[5] HIYAMIZU S, 1981, JPN J APPL PHYS, V20
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ANDO, T
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[7] PRICE PJ, UNPUBLISHED
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[J]. SOLID STATE COMMUNICATIONS, 1979, 29 (10) : 705 - 709
[9] STORMER HL, UNPUBLISHED
[10] HIGH MOBILITY GAAS-ALXGA1-XAS SINGLE PERIOD MODULATION-DOPED HETEROJUNCTIONS
WITKOWSKI, LC
DRUMMOND, TJ
BARNETT, SA
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[J]. ELECTRONICS LETTERS, 1981, 17 (03) : 126 - 128