ELECTRONIC-PROPERTIES OF A SEMICONDUCTOR SUPER-LATTICE .2. LOW-TEMPERATURE MOBILITY PERPENDICULAR TO THE SUPER-LATTICE

被引：187

作者：

MORI, S ^{[1
]}

ANDO, T ^{[1
]}

机构：

[1] UNIV TSUKUBA,INST APPL PHYS,SAKURA,IBARAKI 30031,JAPAN

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1980年 / 48卷 / 03期

关键词：

D O I：

10.1143/JPSJ.48.865

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：865 / 873

页数：9

共 21 条

[1] SCREENING EFFECT AND QUANTUM TRANSPORT IN A SILICON INVERSION LAYER IN STRONG MAGNETIC-FIELDS [J].

ANDO, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1977, 43 (05) :1616-1626

[2]

ANDO T, UNPUBLISHED

[3] SHUBNIKOV-DEHAAS OSCILLATIONS IN A SEMICONDUCTOR SUPERLATTICE [J].

CHANG, LL ;

SAKAKI, H ;

CHANG, CA ;

ESAKI, L .

PHYSICAL REVIEW LETTERS, 1977, 38 (25) :1489-1493

[4] ROLE OF SCATTERING BY SURFACE-ROUGHNESS IN SILICON INVERSION LAYERS [J].

CHENG, YC ;

SULLIVAN, EA .

SURFACE SCIENCE, 1973, 34 (03) :717-731

[5] IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY [J].

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1733-1735

[6] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J].

DINGLE, R ;

STORMER, HL ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :665-667

[7] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J].

EHRENREICH, H .

PHYSICAL REVIEW, 1960, 120 (06) :1951-1963

[8] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J].

ESAKI, L ;

TSU, R .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) :61-&

[9] HIGH-RESOLUTION ELECTRON-MICROSCOPY STUDY OF SI-SIO2 INTERFACE [J].

KRIVANEK, OL ;

SHENG, TT ;

TSUI, DC .

APPLIED PHYSICS LETTERS, 1978, 32 (07) :437-439

[10] ELECTRONIC CONDUCTION IN GAAS AT LOW-TEMPERATURES [J].

LEMOINE, D ;

PELLETIER, C ;

ROLLAND, S ;

GRANGER, R .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 34 (01) :307-317

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