CHARGE CONTROL OF THE HETEROJUNCTION TWO-DIMENSIONAL ELECTRON-GAS FOR MESFET APPLICATION

被引：33

作者：

DELAGEBEAUDEUF, D

LINH, NT

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 07期

关键词：

D O I：

10.1109/T-ED.1981.20432

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：790 / 795

页数：6

相关论文

共 8 条

[1] INELASTIC LIGHT-SCATTERING FROM A QUASI-2-DIMENSIONAL ELECTRON-SYSTEM IN GAAS-ALXGA1-XAS HETEROJUNCTIONS
ABSTREITER, G
PLOOG, K
[J]. PHYSICAL REVIEW LETTERS, 1979, 42 (19) : 1308 - 1311
[2] POTENTIAL DISTRIBUTION AND CAPACITANCE OF ABRUPT HETEROJUNCTIONS
CSERVENY, SI
[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1968, 25 (01) : 65 - &
[3] TWO-DIMENSIONAL ELECTRON-GAS MESFET STRUCTURE
DELAGEBEAUDEUF, D
DELESCLUSE, P
ETIENNE, P
LAVIRON, M
CHAPLART, J
LINH, NT
[J]. ELECTRONICS LETTERS, 1980, 16 (17) : 667 - 668
[4] MIMURA T, 1980, JPN J APPL PHYS, V19, P225
[5] STUDY OF HIGH-SPEED NORMALLY OFF AND NORMALLY ON AI0.5GA0.5AS HETEROJUNCTION GATE GAAS FETS (HJFET)
MORKOC, H
BANDY, SG
SANKARAN, R
ANTYPAS, GA
BELL, RL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 619 - 627
[6] SHARMA BL, SEMICONDUCTOR HETERO, P84
[7] ANALYTICAL MODEL OF GAAS MESFETS
SHUR, MS
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 612 - 618
[8] OBSERVATION OF 2-DIMENSIONAL ELECTRONS IN LPE-GROWN GAAS-ALXGA1-XAS HETEROJUNCTIONS
TSUI, DC
LOGAN, RA
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 99 - 101