STUDY OF HIGH-SPEED NORMALLY OFF AND NORMALLY ON AI0.5GA0.5AS HETEROJUNCTION GATE GAAS FETS (HJFET)

被引：66

作者：

MORKOC, H ^{[1
]}

BANDY, SG ^{[1
]}

SANKARAN, R ^{[1
]}

ANTYPAS, GA ^{[1
]}

BELL, RL ^{[1
]}

机构：

[1] VARIAN ASSOC,CORP SOLID STATE LAB,CENT RES LAB,PALO ALTO,CA 94303

来源：

关键词：

D O I：

10.1109/T-ED.1978.19146

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：619 / 627

页数：9

共 15 条

[1] CLAXTON D, 1977, JUN IEEE MTTS INT MI
[2] QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES
DINGLE, R
WIEGMANN, W
HENRY, CH
[J]. PHYSICAL REVIEW LETTERS, 1974, 33 (14) : 827 - 830
[3] GIACOLETTO LJ, UNPUBLISHED
[4] ISHIKAWA H, 1977, ISSCC DIG TECH PAPER, P200
[5] MORKOC H, UNPUBLISHED
[6] SANKARAN R, UNPUBLISHED
[7] SZE SM, 1969, PHYSICS SEMICONDUCTO
[8] TURNER JA, 1969, 1968 INT S GAAS
[9] NEW HETEROJUNCTION GATE GAAS FET
UMEBACHI, S
ASAHI, K
INOUE, M
KANO, G
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (08) : 613 - 614
[10] NEW HETEROJUNCTION-GATE GAAS FET
UMEBACHI, S
ASAHI, K
NAGASHIMA, A
INOUE, M
KANO, G
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 : 157 - 161