INELASTIC LIGHT-SCATTERING FROM A QUASI-2-DIMENSIONAL ELECTRON-SYSTEM IN GAAS-ALXGA1-XAS HETEROJUNCTIONS

被引：107

作者：

ABSTREITER, G ^{[1
]}

PLOOG, K ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

PHYSICAL REVIEW LETTERS | 1979年 / 42卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.42.1308

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Resonance enhanced inelastic light scattering from a quasi-two-dimensional electron gas confined at the interface of abruptly doped GaAs/n-AlxGa1-xAs heterojunctions has been measured. The samples were fabricated using molecular-beam epitaxy with a high-contrast doping technique. The results show strong evidence for intersubband excitations in a two-dimensional electron system. © 1979 The American Physical Society.

引用

页码：1308 / 1311

页数：4

共 10 条

[1] RAMAN-SPECTROSCOPY - VERSATILE TOOL FOR CHARACTERIZATION OF THIN-FILMS AND HETEROSTRUCTURES OF GAAS AND ALXGA1-XAS
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[5] ELECTRONIC LEVELS IN SURFACE SPACE-CHARGE LAYERS ON SI(100)
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[7] PINCZUK A, UNPUBLISHED
[8] SURFACE SEGREGATION OF SN DURING MBE OF N-TYPE GAAS ESTABLISHED BY SIMS AND AES
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 255 - 259
[9] CALCULATED ENERGY-LEVELS AND OPTICAL-ABSORPTION IN N-TYPE SI ACCUMULATION LAYERS AT LOW-TEMPERATURE
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[J]. PHYSICAL REVIEW LETTERS, 1974, 33 (16) : 960 - 963
[10] STORMER HL, UNPUBLISHED

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