SURFACE SEGREGATION OF SN DURING MBE OF N-TYPE GAAS ESTABLISHED BY SIMS AND AES

[1] SUBSTRATE ORIENTATION AND SURFACE MORPHOLOGY OF GAAS LIQUID-PHASE EPITAXIAL LAYERS [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) : 148 - 153

[2] GENERAL FORMALISM FOR QUANTITATIVE AUGER ANALYSIS [J]. SURFACE SCIENCE, 1975, 48 (01) : 9 - 21

[3] GROWTH OF A GAAS-GAAIAS SUPERLATTICE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (01): : 11 - 16

[4] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[5] PROPERTIES OF SCHOTTKY BARRIERS AND P-N-JUNCTIONS PREPARED WITH GAAS AND ALX GA1-XAS MOLECULAR-BEAM EPITAXIAL LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) : 1258 - 1263

[6] IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1733 - 1735

[7] EPITAXIAL STRUCTURES WITH ALTERNATE ATOMIC-LAYER COMPOSITION MODULATION [J]. APPLIED PHYSICS LETTERS, 1976, 29 (06) : 323 - 325

[8] LEGRESSUS C, 1975, CR ACAD SCI B PHYS, V280, P439

[9] FERMI LEVEL POSITION AT METAL-SEMICONDUCTOR INTERFACES [J]. PHYSICAL REVIEW, 1964, 134 (3A): : A713 - +

[10] RAMAN-SCATTERING BY WAVE-VECTOR DEPENDENT COUPLED PLASMON - LO PHONONS OF N-GAAS [J]. SOLID STATE COMMUNICATIONS, 1977, 21 (10) : 959 - 962

[1] SUBSTRATE ORIENTATION AND SURFACE MORPHOLOGY OF GAAS LIQUID-PHASE EPITAXIAL LAYERS [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) : 148 - 153

[2] GENERAL FORMALISM FOR QUANTITATIVE AUGER ANALYSIS [J]. SURFACE SCIENCE, 1975, 48 (01) : 9 - 21

[3] GROWTH OF A GAAS-GAAIAS SUPERLATTICE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (01): : 11 - 16

[4] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[5] PROPERTIES OF SCHOTTKY BARRIERS AND P-N-JUNCTIONS PREPARED WITH GAAS AND ALX GA1-XAS MOLECULAR-BEAM EPITAXIAL LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) : 1258 - 1263

[6] IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1733 - 1735

[7] EPITAXIAL STRUCTURES WITH ALTERNATE ATOMIC-LAYER COMPOSITION MODULATION [J]. APPLIED PHYSICS LETTERS, 1976, 29 (06) : 323 - 325

[8] LEGRESSUS C, 1975, CR ACAD SCI B PHYS, V280, P439

[9] FERMI LEVEL POSITION AT METAL-SEMICONDUCTOR INTERFACES [J]. PHYSICAL REVIEW, 1964, 134 (3A): : A713 - +

[10] RAMAN-SCATTERING BY WAVE-VECTOR DEPENDENT COUPLED PLASMON - LO PHONONS OF N-GAAS [J]. SOLID STATE COMMUNICATIONS, 1977, 21 (10) : 959 - 962