FERMI LEVEL POSITION AT METAL-SEMICONDUCTOR INTERFACES

被引：316

作者：

MEAD, CA

SPITZER, WG

机构：

来源：

PHYSICAL REVIEW | 1964年 / 134卷 / 3A期

关键词：

D O I：

10.1103/PhysRev.134.A713

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：A713 / +

共 10 条

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[6]

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[7] FERMI LEVEL POSITION AT SEMICONDUCTOR SURFACES [J].

MEAD, CA ;

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[8] CONDUCTION BAND MINIMA IN ALAS AND ALSB [J].

MEAD, CA ;

SPITZER, WC .

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[9] BARRIER HEIGHT STUDIES ON METAL-SEMICONDUCTOR SYSTEMS [J].

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MEAD, CA .

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[10] CONDUCTION BAND MINIMA OF GA(AS1MINUSXPX) [J].

SPITZER, WG ;

MEAD, CA .

PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (3A) :A872-&

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