ANALYTICAL MODEL OF GAAS MESFETS

被引：55

作者：

SHUR, MS ^{[1
]}

机构：

[1] WAYNE STATE UNIV,DETROIT,MI 48201

来源：

关键词：

D O I：

10.1109/T-ED.1978.19145

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：612 / 618

页数：7

共 29 条

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[4] BIAS DEPENDENCE OF GAAS AND INP MESFET PARAMETERS
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LIECHTI, CA
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SHUR, MS
[J]. ELECTRONICS LETTERS, 1970, 6 (12) : 385 - +
[8] STUDY OF ELECTRON-ENERGY RELAXATION-TIMES IN GAAS AND INP
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[9] Grove A S, 1967, PHYS TECHNOLOGY SEMI
[10] GRUBIN HL, 1977, 6TH BIEN C ACT MICR, P45