MEMORY-CELL ARRAY WITH NORMALLY OFF-TYPE SCHOTTKY-BARRIER FETS

[1] HIGH-SPEED GALLIUM-ARSENIDE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J]. ELECTRONICS LETTERS, 1970, 6 (08) : 228 - +

[2] MICROWAVE SILICON SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTOR [J]. ELECTRONICS LETTERS, 1968, 4 (17) : 362 - +

[3] DRANGEID KE, 1968, OCT IEEE INT EL DEV

[4] DRANGEID KE, 1970, IBM J RES DEVELOP, V14, P83

[5] KAWAMURA N, 1970, OCT IEEE INT EL DEV

[6] KOHN G, 1960, AEU, V14, P193

[7] PROJECTION MASKING, THIN PHOTORESIST LAYERS AND INTERFERENCE EFFECTS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 117 - +

[8] METALLIZATION PROCESSES IN FABRICATION OF SCHOTTKY-BARRIER FETS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 148 - +

[9] Schmidt J.D., 1965, SOLIDSTATE DESIGN, V6, P21

[10] SCHUETZE HJ, 1966, SEMICOND PROD SOLID, V9, P31

[1] HIGH-SPEED GALLIUM-ARSENIDE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J]. ELECTRONICS LETTERS, 1970, 6 (08) : 228 - +

[2] MICROWAVE SILICON SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTOR [J]. ELECTRONICS LETTERS, 1968, 4 (17) : 362 - +

[3] DRANGEID KE, 1968, OCT IEEE INT EL DEV

[4] DRANGEID KE, 1970, IBM J RES DEVELOP, V14, P83

[5] KAWAMURA N, 1970, OCT IEEE INT EL DEV

[6] KOHN G, 1960, AEU, V14, P193

[7] PROJECTION MASKING, THIN PHOTORESIST LAYERS AND INTERFERENCE EFFECTS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 117 - +

[8] METALLIZATION PROCESSES IN FABRICATION OF SCHOTTKY-BARRIER FETS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 148 - +

[9] Schmidt J.D., 1965, SOLIDSTATE DESIGN, V6, P21

[10] SCHUETZE HJ, 1966, SEMICOND PROD SOLID, V9, P31