STUDY OF ELECTRON-ENERGY RELAXATION-TIMES IN GAAS AND INP

被引：37

作者：

GLOVER, GH ^{[1
]}

机构：

[1] GE, RES & DEV CTR, SCHENECTADY, NY 12301 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 03期

关键词：

D O I：

10.1063/1.1662343

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1295 / 1301

页数：7

共 34 条

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ARMSTRONG, DB .

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COLLIVER, DJ ;

JOYCE, BD ;

GRAY, KW .

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[6] HIGH-FIELD DISTRIBUTION FUNCTION IN GAAS [J].

CONWELL, EM ;

VASSELL, MO .

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[7]

CONWELL EM, 1967, HIGH FIELD TRANSPORT, P200

[8]

CONWELL EM, 1967, HIGH FIELD TRANSPORT, P153

[9] HOT ELECTRON RELAXATION TIMES IN 2-VALLEY SEMICONDUCTORS AND THEIR EFFECT ON BULK-MICROWAVE OSCILLATORS [J].

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[10]

DAS P, 1966, ELECTRON LETT, V2, P258

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