MEASUREMENTS ON VELOCITY/FIELD CHARACTERISTIC OF INDIUM PHOSPHIDE

被引：33

作者：

BOERS, PM

机构：

来源：

ELECTRONICS LETTERS | 1971年 / 7卷 / 20期

关键词：

D O I：

10.1049/el:19710422

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：625 / +

页数：1

共 13 条

[1] INDIRECT ELECTRON DRIFT VELOCITY VERSUS ELECTRIC FIELD MEASUREMENT IN GAAS [J].

BASTIDA, EM ;

FABRI, G ;

SVELTO, V ;

VAGHI, F .

APPLIED PHYSICS LETTERS, 1971, 18 (01) :28-+

[2] OBSERVATION OF HIGH-FIELD DOMAINS IN TYPE INDIUM PHOSPHIDE [J].

BOERS, PM ;

ACKET, GA ;

PAXMAN, DH ;

TREE, RJ .

ELECTRONICS LETTERS, 1971, 7 (01) :1-&

[3] MEASUREMENTS ON DIPOLE DOMAINS IN INDIUM PHOSPHIDE [J].

BOERS, PM .

PHYSICS LETTERS A, 1971, A 34 (06) :329-+

[4] A SIMPLE ANALYSIS OF STABLE DOMAIN PROPAGATION IN GUNN EFFECT [J].

BUTCHER, PN ;

FAWCETT, W ;

HILSUM, C .

BRITISH JOURNAL OF APPLIED PHYSICS, 1966, 17 (07) :841-&

[5] OPTIMUM SEMICONDUCTOR FOR MICROWAVE DEVICES [J].

FAWCETT, W ;

HILSUM, C ;

REES, HD .

ELECTRONICS LETTERS, 1969, 5 (14) :313-&

[6] A NEW MEASUREMENT OF VELOCITY-FIELD CHARACTERISTIC OF GAAS [J].

FAY, B ;

KINO, GS .

APPLIED PHYSICS LETTERS, 1969, 15 (10) :337-+

[7]

GUNN JB, 1965, PLASMA EFFECTS SOLID, P199

[8] DISPLACED-MAXWELLIAN TRANSPORT CALCULATION FOR INP AND INAS0.2P0.8 [J].

HEINLE, W .

PHYSICS LETTERS A, 1971, A 35 (05) :365-&

[9] 3-LEVEL OSCILLATOR - A NEW FORM OF TRANSFERRED-ELECTRON DEVICE [J].

HILSUM, C ;

REES, HD .

ELECTRONICS LETTERS, 1970, 6 (09) :277-&

[10] BAND STRUCTURE AND HIGH-FIELD TRANSPORT PROPERTIES OF INP [J].

JAMES, LW ;

VANDYKE, JP ;

HERMAN, F ;

CHANG, DM .

PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (10) :3998-+

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