A NEW MEASUREMENT OF VELOCITY-FIELD CHARACTERISTIC OF GAAS

被引：15

作者：

FAY, B

KINO, GS

机构：

[1] Microwave Laboratory, W. W. Hansen Laboratories of Physics, Stanford University, Stanford

来源：

APPLIED PHYSICS LETTERS | 1969年 / 15卷 / 10期

关键词：

D O I：

10.1063/1.1652849

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The velocity-field characteristic for electrons in GaAs has been measured in the negative differential mobility region between 4.5 and 11 kV/cm by a new direct method involving probe measurements on the surface of a bulk GaAs two-port amplifier. The measurements were taken on GaAs of resistivity in the 500-1000 Ω-cm range. © 1969 The American Institute of Physics.

引用

页码：337 / +

页数：1

共 6 条

[1] CALCULATION OF VELOCITY-FIELD CHARACTERISTIC FOR GALLIUM ARSENIDE [J].