MEASUREMENT OF NEGATIVE DIFFERENTIAL MOBILITY OF ELECTRONS IN GAAS

[1] CALCULATION OF VELOCITY-FIELD CHARACTERISTIC FOR GALLIUM ARSENIDE [J]. PHYSICS LETTERS, 1966, 21 (05): : 489 - &

[2] HIGH-FIELD DISTRIBUTION FUNCTION IN GAAS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 22 - +

[3] INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) : 141 - &

[4] GUNN JB, 1966, ELECTRON LETT, V2, P172

[5] GUNN JB, 1965, 1964 P S PLASM EFF S, P199

[6] GUNN JM, TO BE PUBLISHED

[7] TRANSFERRED ELECTRON AMPLIFIERS AND OSCILLATORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (02): : 185 - &

[8] MECHANISM OF GUNN EFFECT FROM A PRESSURE EXPERIMENT [J]. PHYSICAL REVIEW LETTERS, 1965, 14 (16) : 639 - +

[9] POSSIBILITY OF NEGATIVE RESISTANCE EFFECTS IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (500): : 293 - &

[1] CALCULATION OF VELOCITY-FIELD CHARACTERISTIC FOR GALLIUM ARSENIDE [J]. PHYSICS LETTERS, 1966, 21 (05): : 489 - &

[2] HIGH-FIELD DISTRIBUTION FUNCTION IN GAAS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 22 - +

[3] INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) : 141 - &

[4] GUNN JB, 1966, ELECTRON LETT, V2, P172

[5] GUNN JB, 1965, 1964 P S PLASM EFF S, P199

[6] GUNN JM, TO BE PUBLISHED

[7] TRANSFERRED ELECTRON AMPLIFIERS AND OSCILLATORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (02): : 185 - &

[8] MECHANISM OF GUNN EFFECT FROM A PRESSURE EXPERIMENT [J]. PHYSICAL REVIEW LETTERS, 1965, 14 (16) : 639 - +

[9] POSSIBILITY OF NEGATIVE RESISTANCE EFFECTS IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (500): : 293 - &