ANALYTICAL THEORY OF STABLE DOMAINS IN HIGH-DOPED GUNN DIODES

被引：30

作者：

GELMONT, BL

SHUR, MS

机构：

来源：

ELECTRONICS LETTERS | 1970年 / 6卷 / 12期

关键词：

D O I：

10.1049/el:19700269

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：385 / +

页数：1

共 8 条

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[2] STABLE DOMAIN PROPAGATION IN GUNN EFFECT [J].

BUTCHER, PN ;

FAWCETT, W .

BRITISH JOURNAL OF APPLIED PHYSICS, 1966, 17 (11) :1425-&

[3] HIGH-FIELD TRANSPORT IN N-TYPE GAAS [J].

CONWELL, EM ;

VASSELL, MO .

PHYSICAL REVIEW, 1968, 166 (03) :797-+

[4] STABLE SPACE-CHARGE LAYERS IN 2-VALLEY SEMICONDUCTORS [J].

COPELAND, JA .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) :3602-+

[5] NONLINEAR SPACE-CHARGE DOMAIN DYNAMICS IN A SEMICONDUCTOR WITH NEGATIVE DIFFERENTIAL MOBILITY [J].

KROEMER, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :27-+

[6] BEHAVIOUR OF HIGH-FIELD DOMAINS BELOW VOLTAGE OF NUCLEATION THRESHOLD [J].

LEVINSTEIN, ME ;

SHUR, MS .

PHYSICA STATUS SOLIDI, 1968, 28 (02) :827-+

[7] THEORY OF NEGATIVE-CONDUCTANCE AMPLIFICATION AND OF GUNN INSTABILITIES IN 2-VALLEY SEMICONDUCTORS [J].

MCCUMBER, DE ;

CHYNOWETH, AG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :4-+

[8]

Volkov A. F., 1968, SOV PHYS USP, V96, P633

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