TRANSPORT-PROPERTIES IN GAAS-ALXGA1-XAS HETEROSTRUCTURES AND MESFET APPLICATION

[1] TWO-DIMENSIONAL ELECTRON-GAS MESFET STRUCTURE [J]. ELECTRONICS LETTERS, 1980, 16 (17) : 667 - 668

[2] DELAGEBEAUDEUF D, UNPUBLISHED

[3] DELESCLUSE P, 1981, WOCSEMMAD81

[4] HIGH MOBILITY OF TWO-DIMENSIONAL ELECTRONS AT THE GAAS-N-ALGAAS HETEROJUNCTION INTERFACE [J]. APPLIED PHYSICS LETTERS, 1980, 37 (09) : 805 - 807

[5] Judaprawira S., 1981, IEEE Electron Device Letters, VEDL-2, P14, DOI 10.1109/EDL.1981.25322

[6] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : L225 - L227

[7] HIGH MOBILITIES IN ALXGA1-XAS-GAAS HETEROJUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (11) : 1033 - 1035

[8] WITKOWSKI LC, 1980, ELECTRON LETT, V16, P667

[1] TWO-DIMENSIONAL ELECTRON-GAS MESFET STRUCTURE [J]. ELECTRONICS LETTERS, 1980, 16 (17) : 667 - 668

[2] DELAGEBEAUDEUF D, UNPUBLISHED

[3] DELESCLUSE P, 1981, WOCSEMMAD81

[4] HIGH MOBILITY OF TWO-DIMENSIONAL ELECTRONS AT THE GAAS-N-ALGAAS HETEROJUNCTION INTERFACE [J]. APPLIED PHYSICS LETTERS, 1980, 37 (09) : 805 - 807

[5] Judaprawira S., 1981, IEEE Electron Device Letters, VEDL-2, P14, DOI 10.1109/EDL.1981.25322

[6] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : L225 - L227

[7] HIGH MOBILITIES IN ALXGA1-XAS-GAAS HETEROJUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (11) : 1033 - 1035

[8] WITKOWSKI LC, 1980, ELECTRON LETT, V16, P667