HIGH MOBILITY OF TWO-DIMENSIONAL ELECTRONS AT THE GAAS-N-ALGAAS HETEROJUNCTION INTERFACE

[1] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[2] RECENT DEVELOPMENTS IN MOLECULAR-BEAM EPITAXY (MBE) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 275 - 284

[3] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667

[4] Dingle R., 1979, Gallium Arsenide and Related Compounds 1978, P248

[5] DINGLE R, 1979, 2 YAM C LAK YAM, P30

[6] DINGLE R, UNPUBLISHED

[7] PROPERTIES OF HETEROEPITAXIAL INXGA1-XAS BY MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 79 - 85

[8] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : L225 - L227

[9] MORI S, 1979, 2 YAM C LAK YAM, P44

[10] NAGATA K, COMMUNICATION

[1] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[2] RECENT DEVELOPMENTS IN MOLECULAR-BEAM EPITAXY (MBE) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 275 - 284

[3] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667

[4] Dingle R., 1979, Gallium Arsenide and Related Compounds 1978, P248

[5] DINGLE R, 1979, 2 YAM C LAK YAM, P30

[6] DINGLE R, UNPUBLISHED

[7] PROPERTIES OF HETEROEPITAXIAL INXGA1-XAS BY MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 79 - 85

[8] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : L225 - L227

[9] MORI S, 1979, 2 YAM C LAK YAM, P44

[10] NAGATA K, COMMUNICATION