PROPERTIES OF HETEROEPITAXIAL INXGA1-XAS BY MOLECULAR-BEAM EPITAXY

[1] GROWTH AND PROPERTIES OF HETEROEPITAXIAL GALNAS ALLOYS ON GAAS SUBSTRATES USING TRIMETHYLGALLIUM, TRIETHYLINDIUM, AND ARSINE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (05) : 683 - 687

[2] APPLICATION OF MOLECULAR-BEAM EPITAXIAL LAYERS TO HETEROSTRUCTURE LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) : 467 - 470

[3] CONTINUOUS ROOM-TEMPERATURE OPERATION OF GAAS-AL-XGA-1-XAS DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1976, 28 (09) : 501 - 503

[4] BACK-SURFACE EMITTING GAASXSB1-XLEDS(LAMBDA=1.0MUM) PREPARED BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1977, 30 (08) : 397 - 399

[5] PREPARATION OF EPITAXIAL GAXIN1-XAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) : 164 - &

[6] ENSTROM RE, 1971, 3 P INT S GALL ARS R, P30

[7] METALLURGICAL AND ELECTROLUMINESCENCE CHARACTERISTICS OF VAPOR-PHASE AND LIQUID-PHASE EPITAXIAL JUNCTION STRUCTURES OF INXGA1-XAS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (01) : 37 - 66

[8] SPECTRAL LOSSES OF LOW-OH-CONTENT OPTICAL FIBERS [J]. ELECTRONICS LETTERS, 1976, 12 (12) : 310 - 312

[9] ROOM-TEMPERATURE CW OPERATION OF GALNASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.1 MU-M [J]. APPLIED PHYSICS LETTERS, 1976, 28 (12) : 709 - 711

[10] Ilegems M., 1975, J APPL PHYS, V46, P3059

[1] GROWTH AND PROPERTIES OF HETEROEPITAXIAL GALNAS ALLOYS ON GAAS SUBSTRATES USING TRIMETHYLGALLIUM, TRIETHYLINDIUM, AND ARSINE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (05) : 683 - 687

[2] APPLICATION OF MOLECULAR-BEAM EPITAXIAL LAYERS TO HETEROSTRUCTURE LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) : 467 - 470

[3] CONTINUOUS ROOM-TEMPERATURE OPERATION OF GAAS-AL-XGA-1-XAS DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1976, 28 (09) : 501 - 503

[4] BACK-SURFACE EMITTING GAASXSB1-XLEDS(LAMBDA=1.0MUM) PREPARED BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1977, 30 (08) : 397 - 399

[5] PREPARATION OF EPITAXIAL GAXIN1-XAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) : 164 - &

[6] ENSTROM RE, 1971, 3 P INT S GALL ARS R, P30

[7] METALLURGICAL AND ELECTROLUMINESCENCE CHARACTERISTICS OF VAPOR-PHASE AND LIQUID-PHASE EPITAXIAL JUNCTION STRUCTURES OF INXGA1-XAS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (01) : 37 - 66

[8] SPECTRAL LOSSES OF LOW-OH-CONTENT OPTICAL FIBERS [J]. ELECTRONICS LETTERS, 1976, 12 (12) : 310 - 312

[9] ROOM-TEMPERATURE CW OPERATION OF GALNASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.1 MU-M [J]. APPLIED PHYSICS LETTERS, 1976, 28 (12) : 709 - 711

[10] Ilegems M., 1975, J APPL PHYS, V46, P3059