LOW-NOISE TWO-DIMENSIONAL ELECTRON-GAS FET

[1] TWO-DIMENSIONAL ELECTRON-GAS MESFET STRUCTURE [J]. ELECTRONICS LETTERS, 1980, 16 (17) : 667 - 668

[2] DELAGEBEAUDEUF D, UNPUBLISHED

[3] TRANSPORT-PROPERTIES IN GAAS-ALXGA1-XAS HETEROSTRUCTURES AND MESFET APPLICATION [J]. ELECTRONICS LETTERS, 1981, 17 (10) : 342 - 344

[4] MOLECULAR-BEAM SYSTEM CONTROLLED BY QUADRUPOLE MASS-SPECTROMETER [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1977, 10 (11): : 1153 - 1155

[5] HIGH MOBILITY OF TWO-DIMENSIONAL ELECTRONS AT THE GAAS-N-ALGAAS HETEROJUNCTION INTERFACE [J]. APPLIED PHYSICS LETTERS, 1980, 37 (09) : 805 - 807

[6] Judaprawira S., 1981, IEEE Electron Device Letters, VEDL-2, P14, DOI 10.1109/EDL.1981.25322

[7] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : L225 - L227

[8] 2-DIMENSIONAL ELECTRON-GAS AT A SEMICONDUCTOR-SEMICONDUCTOR INTERFACE [J]. SOLID STATE COMMUNICATIONS, 1979, 29 (10) : 705 - 709

[9] HIGH MOBILITY GAAS-ALXGA1-XAS SINGLE PERIOD MODULATION-DOPED HETEROJUNCTIONS [J]. ELECTRONICS LETTERS, 1981, 17 (03) : 126 - 128

[10] HIGH MOBILITIES IN ALXGA1-XAS-GAAS HETEROJUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (11) : 1033 - 1035

[1] TWO-DIMENSIONAL ELECTRON-GAS MESFET STRUCTURE [J]. ELECTRONICS LETTERS, 1980, 16 (17) : 667 - 668

[2] DELAGEBEAUDEUF D, UNPUBLISHED

[3] TRANSPORT-PROPERTIES IN GAAS-ALXGA1-XAS HETEROSTRUCTURES AND MESFET APPLICATION [J]. ELECTRONICS LETTERS, 1981, 17 (10) : 342 - 344

[4] MOLECULAR-BEAM SYSTEM CONTROLLED BY QUADRUPOLE MASS-SPECTROMETER [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1977, 10 (11): : 1153 - 1155

[5] HIGH MOBILITY OF TWO-DIMENSIONAL ELECTRONS AT THE GAAS-N-ALGAAS HETEROJUNCTION INTERFACE [J]. APPLIED PHYSICS LETTERS, 1980, 37 (09) : 805 - 807

[6] Judaprawira S., 1981, IEEE Electron Device Letters, VEDL-2, P14, DOI 10.1109/EDL.1981.25322

[7] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : L225 - L227

[8] 2-DIMENSIONAL ELECTRON-GAS AT A SEMICONDUCTOR-SEMICONDUCTOR INTERFACE [J]. SOLID STATE COMMUNICATIONS, 1979, 29 (10) : 705 - 709

[9] HIGH MOBILITY GAAS-ALXGA1-XAS SINGLE PERIOD MODULATION-DOPED HETEROJUNCTIONS [J]. ELECTRONICS LETTERS, 1981, 17 (03) : 126 - 128

[10] HIGH MOBILITIES IN ALXGA1-XAS-GAAS HETEROJUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (11) : 1033 - 1035