ELECTRON-MOBILITY IN SINGLE AND MULTIPLE PERIOD MODULATION-DOPED (AL,GA)AS/GAAS HETEROSTRUCTURES

被引：38

作者：

DRUMMOND, TJ ^{[1
]}

KOPP, W ^{[1
]}

KEEVER, M ^{[1
]}

MORKOC, H ^{[1
]}

CHO, AY ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 02期

关键词：

D O I：

10.1063/1.330512

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1023 / 1028

页数：6

共 10 条

[1] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9
[2] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES
DINGLE, R
STORMER, HL
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667
[3] EXPERIMENTAL AND THEORETICAL ELECTRON-MOBILITY OF MODULATION DOPED ALXGA1-XAS-GAAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
DRUMMOND, TJ
MORKOC, H
HESS, K
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) : 5231 - 5234
[4] DEPENDENCE OF ELECTRON-MOBILITY ON SPATIAL SEPARATION OF ELECTRONS AND DONORS IN ALXGA1-XAS-GAAS HETEROSTRUCTURES
DRUMMOND, TJ
MORKOC, H
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) : 1380 - 1386
[5] EFFECT OF BACKGROUND DOPING ON THE ELECTRON-MOBILITY OF (AL,GA)AS-GAAS HETEROSTRUCTURES
DRUMMOND, TJ
KOPP, W
MORKOC, H
HESS, K
CHO, AY
STREETMAN, BG
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5689 - 5690
[6] IMPURITY AND PHONON-SCATTERING IN LAYERED STRUCTURES
HESS, K
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (07) : 484 - 486
[7] GROWTH-CONDITIONS TO ACHIEVE MOBILITY ENHANCEMENT IN ALXGA1-XAS-GAAS HETEROJUNCTIONS BY MBE
MORKOC, H
WITKOWSKI, LC
DRUMMOND, TJ
STANCHAK, CM
CHO, AY
STREETMAN, BG
[J]. ELECTRONICS LETTERS, 1980, 16 (19) : 753 - 754
[8] PRICE P, J VAC SCI TECHNOL
[9] 2-DIMENSIONAL ELECTRON-GAS AT A SEMICONDUCTOR-SEMICONDUCTOR INTERFACE
STORMER, HL
DINGLE, R
GOSSARD, AC
WIEGMANN, W
STURGE, MD
[J]. SOLID STATE COMMUNICATIONS, 1979, 29 (10) : 705 - 709
[10] INFLUENCE OF AN UNDOPED (ALGA)AS SPACER ON MOBILITY ENHANCEMENT IN GAAS-(ALGA)AS SUPER-LATTICES
STORMER, HL
PINCZUK, A
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (09) : 691 - 693

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