EFFECT OF BACKGROUND DOPING ON THE ELECTRON-MOBILITY OF (AL,GA)AS-GAAS HETEROSTRUCTURES

被引：18

作者：

DRUMMOND, TJ ^{[1
]}

KOPP, W ^{[1
]}

MORKOC, H ^{[1
]}

HESS, K ^{[1
]}

CHO, AY ^{[1
]}

STREETMAN, BG ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 09期

关键词：

D O I：

10.1063/1.329504

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：5689 / 5690

页数：2

相关论文

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