SINGLE-INTERFACE ENHANCED MOBILITY STRUCTURES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：23

作者：

COLEMAN, JJ

DAPKUS, PD

YANG, JJJ

机构：

来源：

ELECTRONICS LETTERS | 1981年 / 17卷 / 17期

关键词：

D O I：

10.1049/el:19810426

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：606 / 608

页数：3

共 11 条

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APPLIED PHYSICS LETTERS, 1981, 38 (11) :894-896

[2]

COLEMAN JW, UNPUBLISHED

[3]

DAPKUS PD, UNPUBLISHED

[4] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J].

DINGLE, R ;

STORMER, HL ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :665-667

[5] DEPENDENCE OF ELECTRON-MOBILITY ON SPATIAL SEPARATION OF ELECTRONS AND DONORS IN ALXGA1-XAS-GAAS HETEROSTRUCTURES [J].

DRUMMOND, TJ ;

MORKOC, H ;

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) :1380-1386

[6]

DUPUIS RD, 1979, 7TH P INT S GAAS REL, P1

[7] HIGH MOBILITY OF TWO-DIMENSIONAL ELECTRONS AT THE GAAS-N-ALGAAS HETEROJUNCTION INTERFACE [J].

HIYAMIZU, S ;

MIMURA, T ;

FUJII, T ;

NANB, K .

APPLIED PHYSICS LETTERS, 1980, 37 (09) :805-807

[8] ELECTRONIC-PROPERTIES OF A SEMICONDUCTOR SUPER-LATTICE .2. LOW-TEMPERATURE MOBILITY PERPENDICULAR TO THE SUPER-LATTICE [J].

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ANDO, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1980, 48 (03) :865-873

[9]

Rode D. L., 1975, SEMICONDUCT SEMIMET, V10, P1

[10] HIGH MOBILITY GAAS-ALXGA1-XAS SINGLE PERIOD MODULATION-DOPED HETEROJUNCTIONS [J].

WITKOWSKI, LC ;

DRUMMOND, TJ ;

BARNETT, SA ;

MORKOC, H ;

CHO, AY ;

GREENE, JE .

ELECTRONICS LETTERS, 1981, 17 (03) :126-128

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