DEVICE-QUALITY EPITAXIAL AIAS BY METALORGANIC-CHEMICAL VAPOR-DEPOSITION

被引：13

作者：

COLEMAN, JJ

DAPKUS, PD

HOLONYAK, N

LAIDIG, WD

机构：

[1] UNIV ILLINOIS,ELECT ENGN RES LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 11期

关键词：

D O I：

10.1063/1.92219

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：894 / 896

页数：3

共 19 条

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[3] HIGH-BARRIER CLUSTER-FREE ALXGA1-XAS-ALAS-GAAS QUANTUM-WELL HETEROSTRUCTURE LASER [J].

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[4] CONTINUOUS ROOM-TEMPERATURE PHOTOPUMPED LASER OPERATION OF MODULATION-DOPED ALXGA1-XAS-GAAS SUPER-LATTICES [J].

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[5] ABRUPT GA1-XALXAS-GAAS QUANTUM-WELL HETEROSTRUCTURES GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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[6]

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[10] QUANTUM-WELL HETEROSTRUCTURE LASERS [J].

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