DOUBLE-CRYSTAL SPECTROMETER MEASUREMENTS OF LATTICE-PARAMETERS AND X-RAY TOPOGRAPHY ON HETEROJUNCTIONS GAAS-ALXGA1-XAS

被引：80

作者：

ESTOP, E ^{[1
]}

IZRAEL, A ^{[1
]}

SAUVAGE, M ^{[1
]}

机构：

[1] UNIV PIERRE & MARIE CURIE,MINERAL CRISTALLOG LAB,CNRS,F-75230 PARIS 05,FRANCE

来源：

ACTA CRYSTALLOGRAPHICA SECTION A | 1976年 / 32卷 / JUL1期

关键词：

D O I：

10.1107/S0567739476001307

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

收藏

页码：627 / &

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共 9 条

[1] BARBE M, 1974, THESIS PARIS
[2] BARRAULT JV, 1975, COMMUNICATION
[3] DRUZHININA LV, 1975, SOV PHYS-TECH PHYS, V7, P935
[4] THERMAL EXPANSION OF ALAS
ETTENBERG, M
PAFF, RJ
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) : 3926 - +
[5] COEFFICIENT OF EXPANSION OF GALLIUM ARSENIDE FROM -62 TO 200 DEGREES C
PIERRON, ED
PARKER, DL
MCNEELY, JB
[J]. ACTA CRYSTALLOGRAPHICA, 1966, 21 : 290 - &
[6] INTERFACE STRESS OF ALXGA1-XAS-GAAS LAYER STRUCTURES
REINHART, FK
LOGAN, RA
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) : 3171 - 3175
[7] X-RAY DETERMINATION OF STRESSES IN THIN-FILMS AND SUBSTRATES BY AUTOMATIC BRAGG ANGLE CONTROL
ROZGONYI, GA
CIESIELK.TJ
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1973, 44 (08) : 1053 - 1057
[8] ROZGONYI GA, 1974, J CRYST GROWTH, V27, P106
[9] PHENOMENOLOGICAL STUDY OF MENISCUS LINES ON SURFACES OF GAAS LAYERS GROWN BY LPE
SMALL, MB
BLAKESLEE, AE
SHIH, KK
POTEMSKI, RM
[J]. JOURNAL OF CRYSTAL GROWTH, 1975, 30 (02) : 257 - 266