PHENOMENOLOGICAL STUDY OF MENISCUS LINES ON SURFACES OF GAAS LAYERS GROWN BY LPE

被引：33

作者：

SMALL, MB ^{[1
]}

BLAKESLEE, AE ^{[1
]}

SHIH, KK ^{[1
]}

POTEMSKI, RM ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF CRYSTAL GROWTH | 1975年 / 30卷 / 02期

关键词：

D O I：

10.1016/0022-0248(75)90097-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：257 / 266

页数：10

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[3] DETERMINATION OF UNDERCOOLING NECESSARY TO INITIATE EPITAXIAL-GROWTH OF GAAS FROM SOLUTION IN GA [J].

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[6] HYDRODYNAMIC MODEL OF STEADY MOVEMENT OF A SOLID/LIQUID/FLUID CONTACT LINE [J].

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[7]

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[8] THIN SOLUTION MULTIPLE LAYER EPITAXY [J].

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[9]

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[10]

NELSON H, 1963, RCA REV, V24, P603

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