VAPOR GROWTH AND PROPERTIES OF AIAS

[1] PREPARATION OF ALUMINIUM ARSENIDE BY A VAPOUR PHASE TRANSPORT REACTION [J]. NATURE, 1963, 199 (490) : 1287 - &

[2] CHOW, 1964, JANAF THERMOCHEMICAL

[3] THERMAL EXPANSION OF ALAS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) : 3926 - +

[4] VAPORIZATION OF ALUMINUM ARSENIDE [J]. JOURNAL OF CHEMICAL PHYSICS, 1961, 35 (02) : 451 - &

[5] HULTGREN R, 1963, SELECTED VALUES THER

[6] KIKUCHI T, 1964, T JAPAN I METALS, V122, P5

[7] UBER ALUMINIUMARSENID [J]. ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1964, 328 (3-4): : 187 - 193

[8] PROPERTIES OF EFFICIENT SILICON-COMPENSATED ALXGA1-XAS ELECTROLUMINESCENT DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (05) : 2248 - &

[9] FUNDAMENTAL ABSORPTION EDGE OF AIAS AND AIP [J]. SOLID STATE COMMUNICATIONS, 1970, 8 (09) : 693 - &

[10] MANASEVIT HM, 1969, MAY EL SOC M

[1] PREPARATION OF ALUMINIUM ARSENIDE BY A VAPOUR PHASE TRANSPORT REACTION [J]. NATURE, 1963, 199 (490) : 1287 - &

[2] CHOW, 1964, JANAF THERMOCHEMICAL

[3] THERMAL EXPANSION OF ALAS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) : 3926 - +

[4] VAPORIZATION OF ALUMINUM ARSENIDE [J]. JOURNAL OF CHEMICAL PHYSICS, 1961, 35 (02) : 451 - &

[5] HULTGREN R, 1963, SELECTED VALUES THER

[6] KIKUCHI T, 1964, T JAPAN I METALS, V122, P5

[7] UBER ALUMINIUMARSENID [J]. ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1964, 328 (3-4): : 187 - 193

[8] PROPERTIES OF EFFICIENT SILICON-COMPENSATED ALXGA1-XAS ELECTROLUMINESCENT DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (05) : 2248 - &

[9] FUNDAMENTAL ABSORPTION EDGE OF AIAS AND AIP [J]. SOLID STATE COMMUNICATIONS, 1970, 8 (09) : 693 - &

[10] MANASEVIT HM, 1969, MAY EL SOC M