GA0.47IN0.53AS/INP MULTIQUANTUM WELL HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY OPERATING AT 1.53 MU-M

被引：50

作者：

TSANG, WT

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 03期

关键词：

D O I：

10.1063/1.94727

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：288 / 290

页数：3

相关论文

共 18 条

[1] GAIN SPECTRA OF QUANTUM-WELL LASERS
BURT, MG
[J]. ELECTRONICS LETTERS, 1983, 19 (06) : 210 - 211
[2] BURT MG, COMMUNICATION
[3] QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES
DINGLE, R
WIEGMANN, W
HENRY, CH
[J]. PHYSICAL REVIEW LETTERS, 1974, 33 (14) : 827 - 830
[4] DINGLE R, 1976, Patent No. 3982207
[5] GAIN AND CARRIER LIFETIME MEASUREMENTS IN ALGAAS SINGLE QUANTUM WELL LASERS
DUTTA, NK
HARTMAN, RL
TSANG, WT
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (08) : 1243 - 1246
[6] CALCULATION OF AUGER RATES IN A QUANTUM WELL STRUCTURE AND ITS APPLICATION TO INGAASP QUANTUM WELL LASERS
DUTTA, NK
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) : 1236 - 1245
[7] QUANTUM-WELL HETEROSTRUCTURE LASERS
HOLONYAK, N
KOLBAS, RM
DUPUIS, RD
DAPKUS, PD
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) : 170 - 186
[8] ELECTRICAL AND OPTICAL-PROPERTIES OF BE-DOPED INP GROWN BY MOLECULAR-BEAM EPITAXY
KAWAMURA, Y
ASAHI, H
NAGAI, H
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) : 841 - 846
[9] RAZEGHI M, 1983, 4TH INT C INT OPT OP
[10] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR COUPLED MULTIPLE QUANTUM-WELL IN1-XGAXP1-ZASZ-INP HETEROSTRUCTURE LASER-DIODES
REZEK, EA
HOLONYAK, N
FULLER, BK
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2402 - 2405