GAIN SPECTRA OF QUANTUM-WELL LASERS

被引：15

作者：

BURT, MG

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 06期

关键词：

D O I：

10.1049/el:19830145

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：210 / 211

页数：2

相关论文

共 6 条

[1]

DINGLE R, 1976, Patent No. 3982207

[2] VERY LOW THRESHOLD GRIN-SCH GAAS/GAALAS LASER STRUCTURE GROWN BY OM-VPE [J].

HERSEE, SD ;

BALDY, M ;

ASSENAT, P ;

DECREMOUX, B ;

DUCHEMIN, JP .

ELECTRONICS LETTERS, 1982, 18 (20) :870-871

[3] QUANTUM-WELL HETEROSTRUCTURE LASERS [J].

HOLONYAK, N ;

KOLBAS, RM ;

DUPUIS, RD ;

DAPKUS, PD .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :170-186

[4] BAND STRUCTURE OF INDIUM ANTIMONIDE [J].

KANE, EO .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) :249-261

[5] VERY NARROW GRADED-BARRIER SINGLE QUANTUM WELL LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

KASEMSET, D ;

HONG, CS ;

PATEL, NB ;

DAPKUS, PD .

APPLIED PHYSICS LETTERS, 1982, 41 (10) :912-914

[6] EXTREMELY LOW THRESHOLD (ALGA) AS MODIFIED MULTIQUANTUM WELL HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

TSANG, WT .

APPLIED PHYSICS LETTERS, 1981, 39 (10) :786-788