VERY NARROW GRADED-BARRIER SINGLE QUANTUM WELL LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：61

作者：

KASEMSET, D

HONG, CS

PATEL, NB

DAPKUS, PD

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 10期

关键词：

D O I：

10.1063/1.93352

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：912 / 914

页数：3

共 9 条

[1]

CASEY HC, 1978, HETEROSTRUCTURE LASE, P57

[2]

DUPUIS RD, 1978, I PHYS C SER, V45, P1

[3] STIMULATED-EMISSION IN A DEGENERATELY DOPED GAAS QUANTUM WELL [J].

HOLONYAK, N ;

VOJAK, BA ;

MORKOC, H ;

DRUMMOND, TJ ;

HESS, K .

APPLIED PHYSICS LETTERS, 1982, 40 (08) :658-660

[4] QUANTUM-WELL HETEROSTRUCTURE LASERS [J].

HOLONYAK, N ;

KOLBAS, RM ;

DUPUIS, RD ;

DAPKUS, PD .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :170-186

[5]

KASEMSET D, UNPUB

[6] INTERFACIAL RECOMBINATION VELOCITY IN GAALAS-GAAS HETEROSTRUCTURES [J].

NELSON, RJ ;

SOBERS, RG .

APPLIED PHYSICS LETTERS, 1978, 32 (11) :761-763

[7] CARRIER COLLECTION IN A SEMICONDUCTOR QUANTUM WELL [J].

SHICHIJO, H ;

KOLBAS, RM ;

HOLONYAK, N ;

DUPUIS, RD ;

DAPKUS, PD .

SOLID STATE COMMUNICATIONS, 1978, 27 (10) :1029-1032

[8] EXTREMELY LOW THRESHOLD (ALGA)AS GRADED-INDEX WAVEGUIDE SEPARATE CONFINEMENT HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

TSANG, WT .

APPLIED PHYSICS LETTERS, 1982, 40 (03) :217-219

[9] EXTREMELY LOW THRESHOLD (ALGA) AS MODIFIED MULTIQUANTUM WELL HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

TSANG, WT .

APPLIED PHYSICS LETTERS, 1981, 39 (10) :786-788

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