ELECTRICAL AND OPTICAL-PROPERTIES OF BE-DOPED INP GROWN BY MOLECULAR-BEAM EPITAXY

被引：24

作者：

KAWAMURA, Y

ASAHI, H

NAGAI, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 02期

关键词：

D O I：

10.1063/1.332045

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：841 / 846

页数：6

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