EPITAXIAL-GROWTH OF CD-DOPED INP FROM THE VAPOR

被引：7

作者：

CHEVRIER, J

HORACHE, E

GOLDSTEIN, L

LINH, NT

机构：

[1] CNRS,PHYS SOLIDE & ENERGIE SOLAIRE GRP,PL ARISTIDE BRIAND,F-92190 BELLEVUE,FRANCE

[2] THOMSON CSF,F-91401 ORSAY,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 04期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.331027

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3247 / 3251

页数：5

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