IMPATT DEVICE SIMULATION AND PROPERTIES

被引：31

作者：

BAUHAHN, P ^{[1
]}

HADDAD, GI ^{[1
]}

机构：

[1] UNIV MICHIGAN,DEPT ELECT & COMP ENGN,ELECTR PHYS LAB,ANN ARBOR,MI 48109

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 06期

关键词：

D O I：

10.1109/T-ED.1977.18795

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：634 / 642

页数：9

共 23 条

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[10] SEMICONDUCTOR-DEVICE SIMULATION [J].

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