PREMATURE COLLECTION MODE IN IMPATT DIODES

被引：23

作者：

KUVAS, RL

SCHROEDER, WE

机构：

[1] BELL TEL LABS INC,READING,PA 19603

[2] BELL TEL LABS INC,ALLENTOWN,PA 18103

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1975年 / 22卷 / 08期

关键词：

D O I：

10.1109/T-ED.1975.18176

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：549 / 558

页数：10

共 20 条

[1]

ALLAMANDO E, 1974, ACTA ELECTRON, V17, P127

[2] EFFICIENCY ENHANCEMENT IN AVALANCHE-DIODES BY DEPLETION-REGION-WIDTH MODULATION [J].

BLAKEY, PA ;

CULSHAW, B ;

GIBLIN, RA .

ELECTRONICS LETTERS, 1974, 10 (21) :435-436

[3] EFFECT OF VELOCITY-FIELD CHARACTERISTICS ON OPERATION OF AVALANCHE-DIODE OSCILLATORS [J].

CULSHAW, B ;

GIBLIN, RA .

ELECTRONICS LETTERS, 1974, 10 (14) :285-286

[4] IMPATT DIODE QUASI-STATIC LARGE-SIGNAL MODEL [J].

DECKER, DR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (08) :469-479

[5]

DECKER DR, 1974, 1974 WORKSH COMP SEM

[6] ELECTRONIC TUNING EFFECTS IN READ MICROWAVE AVALANCHE DIODE [J].

GILDEN, M ;

HINES, ME .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :169-&

[7] HIGH-EFFICIENCY GAAS LO-HI-LO IMPATT DEVICES BY LIQUID-PHASE EPITAXY FOR X-BAND [J].

GOLDWASSER, RE ;

ROSZTOCZY, FE .

APPLIED PHYSICS LETTERS, 1974, 25 (01) :92-94

[8]

IRVIN JC, 1973, 4TH P BIENN CORN EL, P287

[9] HIGH-POWER HIGH-EFFICIENCY OPERATION OF READ-TYPE IMPATT-DIODE OSCILLATORS [J].

KIM, C ;

STEELE, R ;

BIERIG, R .

ELECTRONICS LETTERS, 1973, 9 (8-9) :173-174

[10]

KIM CK, 1973, 4TH P BIENN CORN EL, P299

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