IMPATT DIODE QUASI-STATIC LARGE-SIGNAL MODEL

被引：17

作者：

DECKER, DR ^{[1
]}

机构：

[1] VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1974年 / ED21卷 / 08期

关键词：

D O I：

10.1109/T-ED.1974.17952

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：469 / 479

页数：11

共 14 条

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[4]

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[5] COMPARISON OF SILICON AND GALLIUM-ARSENIDE LARGE-SIGNAL IMPATT DIODE BEHAVIOR BETWEEN 10 AND 100 GHZ [J].

GRIERSON, JR ;

OHARA, S .

SOLID-STATE ELECTRONICS, 1973, 16 (06) :719-741

[6] AVALANCHE REGION OF IMPATT DIODES [J].

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SCHARFETTER, DL .

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[7]

GUMMEL HK, 1967, IEEE T, VED14, P569

[8]

GUPTA MS, 1973, IEEE T ELECTRON DEVI, VED20, P395

[9] QUASISTATIC APPROXIMATION FOR SEMICONDUCTOR AVALANCHES [J].

KUVAS, R ;

LEE, CA .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) :1743-&

[10]

KUVAS RL, 1972, IEEE T ELECTRON DEVI, VED19, P220

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