TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS

[1] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1962, 128 (06): : 2507 - &

[2] CHYNOWETH AG, PHYSICS 3 5 COMPOUND

[3] ELECTRON-OPTICAL-PHONON SCATTERING IN EMITTER AND COLLECTOR BARRIERS OF SEMICONDUCTOR-METAL-SEMICONDUCTOR STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (12) : 979 - &

[4] FROLICH H, 1937, P ROY SOC, VA160, P230

[5] DIRECT OBSERVATION OF POLARONS AND PHONONS DURING TUNNELING IN GROUP-3-5 SEMICONDUCTOR JUNCTIONS [J]. PHYSICAL REVIEW LETTERS, 1960, 4 (09) : 456 - 458

[6] TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR [J]. BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (02): : 237 - 290

[7] IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J]. PHYSICAL REVIEW, 1964, 134 (3A): : A761 - +

[8] CHARGE MULTIPLICATION IN GAP P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3945 - &

[9] LOGAN RA, 1964, PHYS REV A-GEN PHYS, V136, P1751

[10] LOGAN RA, UNPUBLISHED

[1] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1962, 128 (06): : 2507 - &

[2] CHYNOWETH AG, PHYSICS 3 5 COMPOUND

[3] ELECTRON-OPTICAL-PHONON SCATTERING IN EMITTER AND COLLECTOR BARRIERS OF SEMICONDUCTOR-METAL-SEMICONDUCTOR STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (12) : 979 - &

[4] FROLICH H, 1937, P ROY SOC, VA160, P230

[5] DIRECT OBSERVATION OF POLARONS AND PHONONS DURING TUNNELING IN GROUP-3-5 SEMICONDUCTOR JUNCTIONS [J]. PHYSICAL REVIEW LETTERS, 1960, 4 (09) : 456 - 458

[6] TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR [J]. BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (02): : 237 - 290

[7] IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J]. PHYSICAL REVIEW, 1964, 134 (3A): : A761 - +

[8] CHARGE MULTIPLICATION IN GAP P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3945 - &

[9] LOGAN RA, 1964, PHYS REV A-GEN PHYS, V136, P1751

[10] LOGAN RA, UNPUBLISHED