COMPARISON OF SILICON AND GALLIUM-ARSENIDE LARGE-SIGNAL IMPATT DIODE BEHAVIOR BETWEEN 10 AND 100 GHZ

被引：11

作者：

GRIERSON, JR ^{[1
]}

OHARA, S ^{[1
]}

机构：

[1] PO RES DEPT, IPSWICH IP5 7RE, SUFFOLK, ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 06期

关键词：

D O I：

10.1016/0038-1101(73)90115-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：719 / 741

页数：23

共 28 条

[1] APPROXIMATE LARGE-SIGNAL ANALYSIS OF IMPATT OSCILLATORS [J].

BLUE, JL .

BELL SYSTEM TECHNICAL JOURNAL, 1969, 48 (02) :383-+

[2]

BROOK P, 1970, MOGA C

[3] TEMPERATURE DEPENDENCE OF HOLE VELOCITY IN PARA GAAS [J].

DALAL, VL ;

DREEBEN, AB ;

TRIANO, A .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (07) :2864-&

[4] ELECTRON DRIFT VELOCITY IN AVALANCHING SILICON DIODES [J].

DUH, CY ;

MOLL, JL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (01) :46-+

[5]

GARTNER WW, 1960, TRANSISTORS PRINCIPL

[6]

GIBBONS G, 1971, RECENT PROGRESS SEMI

[7] THEORETICAL CALCULATIONS ON EFFECT OF TEMPERATURE ON OPERATION OF AN IMPATT DIODE [J].

GRIERSON, JR .

ELECTRONICS LETTERS, 1972, 8 (10) :258-+

[8]

GROVES IS, PRIVATE COMMUNICATIO

[9]

HUANG H, 1972, PR INST ELECTR ELECT, V60, P464

[10] QUANTUM EFFICIENCY AND RADIATIVE LIFETIME OF BAND-TO-BAND RECOMBINATION IN HEAVILY DOPED N-TYPE GAAS [J].

HWANG, CJ .

PHYSICAL REVIEW B, 1972, 6 (04) :1355-&

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