THEORETICAL CALCULATIONS ON EFFECT OF TEMPERATURE ON OPERATION OF AN IMPATT DIODE

被引：3

作者：

GRIERSON, JR

机构：

来源：

ELECTRONICS LETTERS | 1972年 / 8卷 / 10期

关键词：

D O I：

10.1049/el:19720191

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：258 / +

页数：1

共 9 条

[1] TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS [J].

CROWELL, CR ;

SZE, SM .

APPLIED PHYSICS LETTERS, 1966, 9 (06) :242-&

[2] ELECTRON DRIFT VELOCITY IN AVALANCHING SILICON DIODES [J].

DUH, CY ;

MOLL, JL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (01) :46-+

[3] ELECTRONIC TUNING EFFECTS IN READ MICROWAVE AVALANCHE DIODE [J].

GILDEN, M ;

HINES, ME .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :169-&

[4] NEGATIVE RESISTANCE IN P-N JUNCTIONS UNDER AVALANCHE BREAKDOWN CONDITIONS .I. [J].

MISAWA, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :137-+

[5]

MISAWA T, 1966, IEEE T ELECTRON DEV, VED13, P143, DOI 10.1109/T-ED.1966.15648

[6] MEASUREMENT OF DRIFT VELOCITY OF HOLES IN SILICON AT HIGH-FIELD STRENGTHS [J].

RODRIGUEZ, V ;

RUEGG, H ;

NICOLET, MA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (01) :44-+

[7] EFFECT OF TEMPERATURE ON OPERATION OF AN IMPATT DIODE [J].

SCHROEDER, WE ;

HADDAD, GI .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (08) :1242-+

[8] DEPENDENCE OF HOLE VELOCITY UPON ELECTRIC FIELD AND HOLE DENSITY FOR P-TYPE SILICON [J].

SEIDEL, TE ;

SCHARFET.DL .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (12) :2563-+

[9]

SZE SM, 1969, PHYSICS SEMICONDUCTO

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