EFFECT OF TEMPERATURE ON OPERATION OF AN IMPATT DIODE

被引:10
作者
SCHROEDER, WE
HADDAD, GI
机构
来源
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1971年 / 59卷 / 08期
关键词
D O I
10.1109/PROC.1971.8370
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1242 / +
页数:1
相关论文
共 5 条
[1]  
ALLAMANDO E, 1968, ONDE ELECTR, V48, P737
[2]   THERMAL EFFECTS AND PULSE MODE OPERATION OF IMPATT DIODES [J].
CHUDOBIAK, WJ .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (06) :935-+
[3]   ELECTRON DRIFT VELOCITY IN AVALANCHING SILICON DIODES [J].
DUH, CY ;
MOLL, JL .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (01) :46-+
[4]   ELECTRONIC TUNING EFFECTS IN READ MICROWAVE AVALANCHE DIODE [J].
GILDEN, M ;
HINES, ME .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :169-&
[5]   A METHOD FOR HEAT FLOW RESISTANCE MEASUREMENTS IN AVALANCHE DIODES [J].
HAITZ, RH ;
STOVER, HL ;
TOLAR, NJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (05) :438-&