COMPARISON OF SILICON AND GALLIUM-ARSENIDE LARGE-SIGNAL IMPATT DIODE BEHAVIOR BETWEEN 10 AND 100 GHZ

被引：11

作者：

GRIERSON, JR ^{[1
]}

OHARA, S ^{[1
]}

机构：

[1] PO RES DEPT, IPSWICH IP5 7RE, SUFFOLK, ENGLAND

来源：

关键词：

D O I：

10.1016/0038-1101(73)90115-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：719 / 741

页数：23

共 28 条

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GIBBONS, G .

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VANIPEREN, BB ;

TJASSENS, H .

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VANIPEREN BB, 1970, MOGA C

WARD, AL ;

UDELSON, BJ .

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[28]

WIERICH RL, 1971, THESIS U COLLEGE LON