ELECTRON AND HOLE IONIZATION RATES IN EPITAXIAL SILICON AT HIGH ELECTRIC-FIELDS

被引：358

作者：

GRANT, WN ^{[1
]}

机构：

[1] BELL TEL LABS, MURRAY HILL, NJ 07974 USA

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 10期

关键词：

D O I：

10.1016/0038-1101(73)90147-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1189 / 1203

页数：15

共 24 条

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