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CARRIER DENSITY PROFILES IN ZN-DIFFUSED AND CD-DIFFUSED INP

被引：35
作者：
ANDO, H
SUSA, N
KANBE, H
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 03期
关键词：
D O I：
10.1143/JJAP.20.L197
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L197 / L200
页数：4
相关论文
共 10 条
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    ANDO, H
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    KANEDA, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) : L277 - L280
  • [2] CHANGAND LL, 1964, SOLID STATE ELECTRON, V3, P481
  • [3] FORMATION OF P+-P--N- JUNCTIONS IN INP BY CD DIFFUSION
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    [J]. APPLIED PHYSICS LETTERS, 1980, 36 (11) : 924 - 926
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    [J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS, 1979, 26 (12): : 987 - 1010
  • [5] MAKAJAN S, 1979, APPL PHYS LETT, V72, P165
  • [6] PEZEK EA, 1978, SOLID STATE ELECTRON, V21, P325
  • [7] NEW INGAAS-INP AVALANCHE PHOTO-DIODE STRUCTURE FOR THE 1-1.6 MU-M WAVELENGTH REGION
    SUSA, N
    NAKAGOME, H
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    ANDO, H
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    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (08) : 864 - 870
  • [8] BEHAVIOR OF AU-INP SCHOTTKY DIODES UNDER HEAT-TREATMENT
    SZYDLO, N
    OLIVIER, J
    [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) : 1445 - 1449
  • [9] TIEN PK, 1979, APPL PHYS LETT, V34, P701, DOI 10.1063/1.90611
  • [10] DIFFUSION PROFILES OF ZINC IN INDIUM-PHOSPHIDE
    TUCK, B
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    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1975, 8 (15) : 1806 - 1821
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