TUNNELING CURRENT IN INGAAS AND OPTIMUM DESIGN FOR INGAAS-INP AVALANCHE PHOTO-DIODE

被引：64

作者：

ANDO, H ^{[1
]}

KANBE, H ^{[1
]}

ITO, M ^{[1
]}

KANEDA, T ^{[1
]}

机构：

[1] FUJITSU LABS LTD,KAWASAKI,KANAGAWA 211,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 06期

关键词：

D O I：

10.1143/JJAP.19.L277

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：L277 / L280

页数：4

相关论文

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