INGAAS AVALANCHE PHOTO-DIODE WITH INP P-N-JUNCTION

被引：41

作者：

KANBE, H

SUSA, N

NAKAGOME, H

ANDO, H

机构：

来源：

ELECTRONICS LETTERS | 1980年 / 16卷 / 05期

关键词：

D O I：

10.1049/el:19800117

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：163 / 165

页数：3

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